Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method
Identifieur interne : 004531 ( Main/Repository ); précédent : 004530; suivant : 004532Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method
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Abstract
Results from the growth of bulk Ga1-xInxSb crystals are presented. The primary challenge for ternary crystal growth is to control the composition and electrical resistivity while also reducing the concentration of defects. A modified horizontal traveling heater method (HTHM) growth process is described which accomplishes these goals. This method uses excess indium as a solvent, allowing growth of the ternary crystal at a given composition, below the liquidus temperature of the desired alloy. Lower temperature growth reduces the density of native defects such as gallium vacancies. The horizontal traveling heater method produces a zone-leveling effect on the alloy composition, so that a uniform composition crystal is obtained. The solute distribution achieved by HTHM is compared with a crystal grown by the horizontal Bridgman method.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method</title><author><name sortKey="Houchens, Brent C" uniqKey="Houchens B">Brent C. Houchens</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Rice University</s1><s2>Houston, TX</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Rice University</wicri:noRegion></affiliation></author><author><name sortKey="Becla, Piotr" uniqKey="Becla P">Piotr Becla</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Solid State Scientific Corp.</s1><s2>Nashua, NH</s2><s3>USA</s3><sZ>2 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Solid State Scientific Corp.</wicri:noRegion></affiliation></author><author><name sortKey="Tritchler, Stephanie E" uniqKey="Tritchler S">Stephanie E. Tritchler</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Rice University</s1><s2>Houston, TX</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Rice University</wicri:noRegion></affiliation></author><author><name sortKey="Goza, Andres J" uniqKey="Goza A">Andres J. Goza</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Rice University</s1><s2>Houston, TX</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Rice University</wicri:noRegion></affiliation></author><author><name sortKey="Bliss, David F" uniqKey="Bliss D">David F. Bliss</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Air Force Research Laboratory, Sensors Directorate, Hanscom AFB</s1><s2>MA</s2><s3>USA</s3><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Massachusetts</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0259154</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0259154 INIST</idno><idno type="RBID">Pascal:10-0259154</idno><idno type="wicri:Area/Main/Corpus">004496</idno><idno type="wicri:Area/Main/Repository">004531</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bridgman method</term><term>Crystal growth</term><term>Crystal growth from melts</term><term>Defect density</term><term>Electric resistivity</term><term>Gallium</term><term>Growth from melt</term><term>Growth mechanism</term><term>Indium</term><term>Segregation</term><term>Ternary compounds</term><term>Ternary semiconductors</term><term>Vacancies</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Croissance cristalline</term><term>Semiconducteur ternaire</term><term>Mécanisme croissance</term><term>Croissance cristalline en phase fondue</term><term>Résistivité électrique</term><term>Densité défaut</term><term>Indium</term><term>Gallium</term><term>Lacune</term><term>Méthode Bridgman</term><term>Ségrégation</term><term>Méthode phase fondue</term><term>Composé ternaire</term><term>GaInSb</term><term>Ga1-xInxSb</term><term>In</term><term>8110</term><term>8110A</term><term>8110F</term><term>6475</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Results from the growth of bulk Ga<sub>1-x</sub>In<sub>x</sub>Sb crystals are presented. The primary challenge for ternary crystal growth is to control the composition and electrical resistivity while also reducing the concentration of defects. A modified horizontal traveling heater method (HTHM) growth process is described which accomplishes these goals. This method uses excess indium as a solvent, allowing growth of the ternary crystal at a given composition, below the liquidus temperature of the desired alloy. Lower temperature growth reduces the density of native defects such as gallium vacancies. The horizontal traveling heater method produces a zone-leveling effect on the alloy composition, so that a uniform composition crystal is obtained. The solute distribution achieved by HTHM is compared with a crystal grown by the horizontal Bridgman method.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>312</s2></fA05><fA06><s2>8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method</s1></fA08><fA11 i1="01" i2="1"><s1>HOUCHENS (Brent C.)</s1></fA11><fA11 i1="02" i2="1"><s1>BECLA (Piotr)</s1></fA11><fA11 i1="03" i2="1"><s1>TRITCHLER (Stephanie E.)</s1></fA11><fA11 i1="04" i2="1"><s1>GOZA (Andres J.)</s1></fA11><fA11 i1="05" i2="1"><s1>BLISS (David F.)</s1></fA11><fA14 i1="01"><s1>Rice University</s1><s2>Houston, TX</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Solid State Scientific Corp.</s1><s2>Nashua, NH</s2><s3>USA</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Air Force Research Laboratory, Sensors Directorate, Hanscom AFB</s1><s2>MA</s2><s3>USA</s3><sZ>5 aut.</sZ></fA14><fA20><s1>1090-1094</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000181745330080</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>15 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0259154</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Results from the growth of bulk Ga<sub>1-x</sub>In<sub>x</sub>Sb crystals are presented. The primary challenge for ternary crystal growth is to control the composition and electrical resistivity while also reducing the concentration of defects. A modified horizontal traveling heater method (HTHM) growth process is described which accomplishes these goals. This method uses excess indium as a solvent, allowing growth of the ternary crystal at a given composition, below the liquidus temperature of the desired alloy. Lower temperature growth reduces the density of native defects such as gallium vacancies. The horizontal traveling heater method produces a zone-leveling effect on the alloy composition, so that a uniform composition crystal is obtained. The solute distribution achieved by HTHM is compared with a crystal grown by the horizontal Bridgman method.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A10A</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A10F</s0></fC02><fC02 i1="03" i2="3"><s0>001B60D75</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Croissance cristalline</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Crystal growth</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Semiconducteur ternaire</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Ternary semiconductors</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Croissance cristalline en phase fondue</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Crystal growth from melts</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Résistivité électrique</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Electric resistivity</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Densité défaut</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Defect density</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Densidad defecto</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Indium</s0><s2>NC</s2><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium</s0><s2>NC</s2><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Gallium</s0><s2>NC</s2><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Gallium</s0><s2>NC</s2><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Lacune</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Vacancies</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Méthode Bridgman</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Bridgman method</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Ségrégation</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Segregation</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Méthode phase fondue</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Growth from melt</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Método fase fundida</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>GaInSb</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Ga1-xInxSb</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>In</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>8110</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>8110A</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>8110F</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>6475</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>172</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>American Conference on Crystal Growth and Epitaxy</s1><s2>17</s2><s3>Lake Geneva, Wisconsin USA</s3><s4>2009-08-09</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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